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Telecom C-band single-photon sources with a semiconductor-dielectric microresonator

Yuriy Serov, Aidar Galimov, Sergey Sorokin, Nikolai Maleev, Marina Kulagina, Yuriy Zadiranov, Grigorii Klimko, Maxim Rakhlin, Alexey Veretennikov, Gleb Veyshtort, Olga Lakuntsova, Yuliya Salii, Daria Berezina, Sergey Troshkov, Demid Kirilenko, Alexey Blokhin, Alexei Vasil'ev, Alexander Kuzmenkov, Mikhail Bobrov, Irina Sedova, Tatiana V. Shubina, Alexey A. Toropov·April 8, 2026
Mesoscale Physicsphysics.opticsQuantum Physics

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Abstract

Secure communications with quantum key distribution over fiber-optic links is one of the few recognized applications of quantum physics at the level of individual quanta -- single C-band photons. Currently, the widely used sources of such photons are highly attenuated laser pulses, featured by a low probability of single photon occurrence. Here, we present an efficient source with an InAs/GaAs quantum dot on a metamorphic buffer layer inside a micropillar-shaped microcavity. The key innovation is the use of different semiconductor and dielectric materials to form the lower (GaAs/AlGaAs) and upper (Si/SiO$_2$) Bragg reflectors. Compatibility of these materials in a monolithic source is achieved by depositing a small amount of Si/SiO$_2$ pairs on an incomplete micropillar made from a coherent heterostructure grown by molecular beam epitaxy. This design enables resonant excitation with $π$-pulses and generation of polarized photons with a record-breaking end-to-end efficiency of 11%.

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