Rhenium as a material platform for long-lived transmon qubits

Abstract

Dielectric loss at the interfaces of superconducting films has long been recognized as limiting the performance of state-of-the-art superconducting circuits. Notably, the presence of a native oxide layer on the film is hypothesized to contribute to dielectric loss at the metal-air interface. Here, we explore rhenium as a candidate for the film, motivated by its remarkable property to suppress native oxide formation. We demonstrate rhenium on sapphire as a promising material platform for superconducting circuits through the realization of transmons with mean relaxation times $T_1$ up to 407 microseconds at 5 GHz. Our transmons are supplemented with a loss characterization study, in which we separate the dominant loss mechanisms and construct a loss budget that agrees with our $T_1$ measurements. Further characterization may establish rhenium as a leading candidate for maximizing decoherence time.