Modification of Hanle and polarization recovery curves under interplay of hopping and quantum measurement back action
AI Breakdown
Get a structured breakdown of this paper — what it's about, the core idea, and key takeaways for the field.
Abstract
The measurements of Hanle and polarization recovery effects for localized charge carriers are the basic tools for determining parameters of the spin dynamics, such as strength of the hyperfine interaction, for example, in quantum dots. We describe the dependence of the spin polarization of localized electrons on transverse and longitudinal magnetic fields taking into account the interplay between electron hopping and measurement back action. We show that these two have a qualitatively similar effect in the Faraday geometry, but compete in the Voigt geometry. This allows one to describe a broad range of the experimental results and study the fundamental effects of quantum measurements.