Amplified Directional Photoluminescence from CIS Quantum Dots and hBN Quantum Emitters using Tunable BIC Metasurfaces
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Abstract
Integrated and tunable light sources are critical for advancing quantum nanophotonic chips in quantum computing, communications, and sensing. However, efficient and tunable emission amplification post-fabrication poses major challenges. Hybrid metasurfaces combining niobium pentoxide (Nb2O5), copper indium sulfide (CIS) quantum dots or hexagonal boron nitride (hBN), and antimony trisulfide (Sb2S3) as a low-loss phase-change material offer a compelling solution for dynamic control and amplification of photoluminescence and quantum light emission. In this work, we report an active hybrid metasurface supporting tunable bound states in the continuum (BIC) resonances in the visible regime, achieving experimental Q-factors up to 206 and strong amplification of CIS QDs photoluminescence as well as quantum light emission of hBN single-photon emitters. The metasurface enables BIC resonance shifts of 33.5 nm in the visible spectrum via phase transition of Sb2S3, and 17 nm through dimensional parametric tuning. We experimentally demonstrate highly directional photoluminescence amplification up to 33-fold, alongside broad tunable amplified PL emission upon Sb2S3 phase modulation. Furthermore, we propose amplified, tunable, and on-demand strong coupling of hBN single-photon emitters with the tunable BIC metasurface for next-generation broadband quantum nanophotonic chips. This work sets a new benchmark in reconfigurable nanophotonic platforms for efficient quantum light sources in integrated photonic systems.