Fast and Sensitive Readout of a Semiconductor Quantum Dot Using an In-Situ Microwave Resonator with Enhanced Gate Lever Arm
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Abstract
We report an experimental study of a Si/SiGe double quantum dot (DQD) directly coupled to a niobium superconducting coplanar stripline (CPS) microwave resonator. This hybrid architecture enables high-bandwidth dispersive readout suitable for real-time feedback and error-correction protocols. Fast and sensitive readout is achieved primarily by optimizing the DQD gate lever arm, guided by MaSQE quantum dot simulations, which enhances the dispersive signal without requiring high-impedance resonators. We demonstrate a signal-to-noise ratio (SNR) of unity with an integration time of 34.54 nanoseconds, corresponding to a system bandwidth of 14.48 MHz and a charge sensitivity of 0.000186 e per square root hertz. Analysis of the voltage power spectral density (PSD) of the in-phase (I) and quadrature (Q) baseband signals characterizes the system's readout noise, with the PSD's dependence on integration time providing insight into distinct physical regimes.