Coupling 4H-Silicon Carbide spins to a microwave resonator at milli-Kelvin temperature

Abstract

Coupling microwave cavity modes with spin qubit transitions is crucial for enabling efficient qubit readout and control, long-distance qubit coupling, quantum memory implementation, and entanglement generation. We experimentally observe the coupling of different spin qubit transitions in Silicon Carbide (SiC) material to a 3D microwave (MW resonator mode around 12.6~GHz at a temperature of 10~mK. Tuning the spin resonances across the cavity resonance via magnetic-field sweeps, we perform MW cavity transmission measurements. We observe spin transitions of different spin defects that are detuned from each other by around 60-70~MHz. By optically exciting the SiC sample placed in the MW cavity with an 810~nm laser, we observe the coupling of an additional spin resonance to the MW cavity, also detuned by around 60-70 MHz from the centre resonance. We perform complementary confocal optical spectroscopy as a function of temperature from 4~K to 200~K. Combining the confocal spectroscopy results and a detailed analysis of the MW-resonator-based experiments, we attribute the spin resonances to three different paramagnetic defects: positively-charged carbon antisite vacancy pair (CAV$^+$), and the negatively-charged silicon vacancy spins located at two different lattice sites, namely V$_1$ and V$_2$ spins. The V$_1$ and V$_2$ lines in SiC are interesting qubit transitions since they are known to be robust to decoherence. Additionally, the CAV$^+$-transition is known to be a bright single-photon source. Consequently, the demonstration of the joint coupling of these spin qubits to a MW cavity mode could lead to interesting new modalities: The microwave cavity could act as an information bus and mediate long-range coupling between the spins, with potential applications in quantum computing and quantum communication, which is an attractive proposition in a CMOS-compatible material such as SiC.