Design and Optimization of Spin Dynamics in Ge Quantum Dots: g-Factor Modulation, Geometry-Induced Dephasing Sweet Spots, and Phonon-Induced Relaxation

Abstract

Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that these transitions strongly modify wavefunction localization, heavy-hole/light-hole mixing, and the effective vertical electric field, leading to pronounced g-factor modulation and geometry-induced dephasing sweet spots where the qubit becomes first-order insensitive to vertical electric-field fluctuations. We further find that phonon-induced spin relaxation exhibits a strong dependence on device size and bias, with T1 following a magnetic-field scaling close to B-9, consistent with Rashba-dominated heavy-hole spin dynamics. These results are obtained using a comprehensive three-dimensional simulation framework for strained Si0.2Ge0.8/Ge gate-defined hole spin qubits, combining realistic electrostatics with a four-band Luttinger-Kohn Hamiltonian. Unlike simplified symmetric confinement models, this approach captures asymmetric wavefunction redistribution, g-tensor anisotropy, and the coupled electrostatic and spin response of realistic devices. Our results establish gate pattern and bias design as practical tools for optimizing spin coherence in Ge hole-spin qubits.