Scalable Quantum Memory Nodes using nuclear spins in Silicon Carbide

Abstract

The ultimate motivation of my project is to address the possibility of building a quantum analogue of Internet of Things in order to improve the standards of quantum information processing. A distributed quantum computing network which is capable of achieving this goal, would require large sets of memory nodes capable of performing arbitrary quantum information protocols with high fidelity [1], [2]. So far, the challenge in this field has been in realizing such quantum memory nodes with features for scalable quantum computing. Solid state spins in 4H-Silicon Carbide (4H-SiC) owing to its material properties provides a suitable platform in achieving this goal wherein a controlled generation of highly coherent qubit registers using nuclear spins $(^{13}\mathrm{C} \ \text{or} \ {}^{\text{29}} \text{Si})$ and silicon vacancy color centers $(V_{Si}^{-} \ \text{center})$| are possible[3], [4]. The magnetic dipole-dipole coupling between the isotope nuclear spins and the silicon vacancy color center can be tapped using microwave pulse (MW) sequence (as shown in Fig. 1(a)) for controlled driving of nuclear spin.