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Electrical Control of Uniformity in Quantum Dot Devices

M. Meyer, Corentin D'eprez, Timo R van Abswoude, Ilja N Meijer, Di Liu, Chien-An Wang, Saurabh Karwal, S. Oosterhout, F. Borsoi, A. Sammak, N. Hendrickx, G. Scappucci, M. Veldhorst·November 24, 2022·DOI: 10.1021/acs.nanolett.2c04446
MedicinePhysics

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Abstract

Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots, reducing the spread in pinch-off voltages by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.

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