Strong coupling between a photon and a hole spin in silicon
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Abstract
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbour quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible metal–oxide–semiconductor fabrication process. By leveraging the strong spin–orbit interaction intrinsically present in the valence band of silicon, we achieve a spin–photon coupling rate as high as 330 MHz, largely exceeding the combined spin–photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots. Strong intrinsic spin–orbit interaction unlocks the potential of circuit quantum electrodynamics with hole spins in silicon, resulting in strong spin–photon coupling of 300 MHz.